Gas diffusion barriers on polymers using Al2O3 atomic layer deposition

By M. Groner, S. George, R. S. Mclean, P. Carcia. 2006

394 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/50d128635ebfa4fc5a19232562bbc92df6281036

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1. J. Kwon
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4. Sung‐Min Lee

Citations in the corpus

• A Review of Flexible OLEDs Toward Highly Durable Unusual Displays (2017, background): “It is remarkable that the WVTR value of an Al2O3 film (7.9 × 10−4 g/m2/day at a thickness of 30 nm) deposited by ALD (precursor: trimethylaluminium and reactant: H2O) [65] is much lower than that of an MgO film (7.1 × 10−2 g/m2/day at a thickness of 40 nm) deposited by ALD (precursor: bis(ethylcyclo”