Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

By V. Dubrovskii, N. Sibirev, G. Cirlin, I. Soshnikov, Wanghua Chen, R. Lardé, E. Cadel, P. Pareige, Tao Xu, B. Grandidier and 5 more. 2009

170 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/50cfa656c846feebcdeab33ccac95899453779ef