Bottom-up graphene nanoribbon field-effect transistors
By Patrick B. Bennett, Zahra Pedramrazi, A. Madani, Yen-Chia Chen, D. G. Oteyza, Chen Chen, F. Fischer, M. Crommie, Jeffrey Bokor. 2013
242 citations recorded by the source corpus.
Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/506c732482c95d40d48fc0eb77cea9e83e4ebe1c
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In Biomedical Engineering
- Kostas Kostarelos
- M. Prato
- A. Bianco
- Francesco Bonaccorso
- A. Castellanos-Gómez
- C. Backes
- Paolo Samorì
- A. Ciesielski
In Electrical and Electronic Engineering
- Francesco Bonaccorso
- Andrea C. Ferrari
- C. Backes
- Xiaodong Zhuang
- A. Ciesielski
- Paolo Samorì
- A. Castellanos-Gómez
- Xinliang Feng
In Materials Chemistry
- Kostas Kostarelos
- M. Prato
- Francesco Bonaccorso
- A. Bianco
- A. Castellanos-Gómez
- Jonathan N. Coleman
- Andrea C. Ferrari
- Paolo Samorì
Citations in the corpus
- Production and processing of graphene and related materials (2020, methodology): “The potential of GNR-based devices was demonstrated by the realization of GNR-based field effect transistors (FETs) with an on current of 1 μA and on/off ratio of 105 [71, 72].”