Electrically pumped continuous-wave III–V quantum dot lasers on silicon
By Siming Chen, Wei Li, Jiang Wu, Q. Jiang, M. Tang, S. Shutts, S. Elliott, A. Sobiesierski, A. Seeds, I. Ross and 2 more. Nature Photonics, 2016
787 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/505e0f1c00e9509434d7935bef061951fd526fcd
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017, neutral): “Moreover, the strong strain field of a QD array can bend the propagation of threading dislocations [97] or propel threading dislocations away from the QDs [99].”
- Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies (2021, neutral): “Demonstrations of epitaxial growth of III–Von Si have also been reported despite the large lattice mismatch between Si and III–V (for example, InP has 8% lattice mismatch with Si).(278,279) The integration of III–V on silicon also provides a route for the implementation of efficient high-speed modul”
- Mid-infrared integrated photonics on silicon: a perspective (2017, background): “At the telecom band, heteroepitaxial growth has culminated in electrically pumped laser sources on Si based on n-doped Ge [116] and InAs/GaAs quantum dots [117].”
- Next-generation mid-infrared sources (2017, background): “interband QD lasers have been demonstrated to have a lower Jth [228], a nearly flat temperature dependence of Jth [229] and greater insensitivity to defects, making SAQDs ideal for the integration of III-V optoelectronic materials on Si [230].”