ZnO: growth, doping & processing

By D. Norton, Y. Heo, M. Ivill, K. Ip, S. Pearton, M. Chisholm, T. Steiner. 2004

555 citations recorded by the source corpus.

Abstract A review is given here of recent results in developing improved control of growth, doping, and fabrication processes for ZnO devices with possible applications to ultraviolet (UV) light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices. ZnO can be grown on cheap substrates such as glass at relatively low temperatures and may have advantages over the GaN system in some of these applications.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/50426dca8eb5f995b6c49bb96ea7a73c2b6a15eb

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In Electronic, Optical and Magnetic Materials

1. S. Mao
2. Shen-ming Chen
3. S. A. Kumar

In Materials Chemistry

1. S. Mao
2. Shen-ming Chen
3. S. A. Kumar

Citations in the corpus

• Fabrication and characterization of ZnO nanowires based UV photodiodes (2006, background): “They can be further doped into n-type by introducing dopants, such as aluminum, gallium, indium or excess zinc, while p-type doping is much more difficult to achieve [ 17 ,18].”
• Nanostructured Zinc Oxide Particles in Chemically Modified Electrodes for Biosensor Applications (2008, background): “received attention in optics, optoelectronics, sensors, and actuators due to its semiconducting, piezoelectric, and pyroelectric properties (Sun and Kwok 1999; Norton et al. 2004).”