High-Speed, Low-Current-Density 850 nm VCSELs

By Petter Westbergh, Johan S. Gustavsson, Å. Haglund, M. Skold, A. Joel, Anders Larsson. IEEE Journal of Selected Topics in Quantum Electronics, 2009

153 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4ee6fd4b76ff59373bb647360b6ad8d1420c5152

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In Electrical and Electronic Engineering

1. Anders Larsson
2. Petter Westbergh
3. Å. Haglund
4. Johan S. Gustavsson

Citations in the corpus

• Advances in VCSELs for Communication and Sensing (2010, background): “Efforts on improving the speed of GaAs-based 850 nm datacom VCSELs has enabled a modulation bandwidth of 20 GHz [5-6], with more recent work recognizing the importance of reducing the photon lifetime extending the bandwidth to 23 GHz (Fig.”
• Impact of Photon Lifetime on High-Speed VCSEL Performance (2011, methodology): “The epitaxial design for the 850-nm VCSELs presented here is based on the high-speed design presented in [6] with a graded 1–λ separate confinement heterostructure (SCH) region containing an active region with five 4-nm-thick In0.”