Room-temperature spin injection from Fe into GaAs.

By H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H. Schönherr, K. Ploog. Physical Review Letters, 2001

619 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4e5678016c67c84cb97b70a9b06566020803f1a3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Y. Tserkovnyak
2. A. Brataas
3. G. Bauer
4. B. Halperin
5. C. Marrows
6. Pallab K. Bhattacharya
7. M. Holub
8. Axel Hoffmann

In Electrical and Electronic Engineering

1. A. Brataas
2. G. Bauer
3. Y. Tserkovnyak
4. C. Marrows

Citations in the corpus

• Spin-polarised currents and magnetic domain walls (2005, background): “Several groups have recently demonstrated spin injection from metals[79, 80, 81], ferromagnetic semiconductors [82, 83, 84] and tunnel and hot electron injectors [85, 86, 87] into a semiconductor by using a so-called spin-LED as a detector.”
• Spin-polarized light-emitting diodes and lasers (2007, methodology): “The first spin-LED utilizing a ferromagnetic metal spin aligner was reported by Zhu et al [74] where a spininjection efficiency of 2% from Fe was measured at 300 K in an InGaAs QW spin-LED after accounting for the Zeeman effect.”
• Nonlocal magnetization dynamics in ferromagnetic heterostructures (2004, background): “Spin injection into bulk semiconductors has so far been reported only in optical pump-and-probe experiments (Kikkawa and Awschalom, 1999) and with high-resistance ferromagnetic injectors (Fiederling et al., 1999; Ohno et al., 1999) or Schottky/tunnel barriers (Monsma et al., 1998; Zhu et al., 2001).”