Structural and electronic properties of lead chalcogenides from first principles

By K. Hummer, A. Grüneis, Georg Kresse. 2007

162 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4e4888e679cea1353fc0cdee8474782ecd74c9ba

How researchers see this paper

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In Electrical and Electronic Engineering

1. Z. M. Gibbs
2. G. J. Snyder
3. A. Lalonde
4. Liang Fu
5. Li-dong Zhao
6. Y. Pei
7. M. Kanatzidis

In Materials Chemistry

1. Hsin Lin
2. Arun Bansil
3. Z. M. Gibbs
4. Liang Fu
5. G. J. Snyder
6. A. Lalonde
7. Wenhui Duan
8. Junwei Liu

Citations in the corpus

• Optical band gap and the Burstein–Moss effect in iodine doped PbTe using diffuse reflectance infrared Fourier transform spectroscopy (2013, background): “While the accepted view of PbTe is as a direct gap semiconductor, with evidence shown both experimentally [50, 61–63] and theoretically [14, 15, 64], some confusion as to whether PbTe was a direct or indirect gap semiconductor existed in early optical measurements of PbTe where some authors obtained”
• Topological crystalline insulators in the SnTe material class (2012, methodology): “The k · p theory of the band structure near a given L point is given by[11]: H = mσz + v(k1s2 − k2s1)σx + v3k3σy.”