Controlled shallow single ion implantation in silicon using an active substrate for sub-20 keV ions

By D. Jamieson, Changyi Yang, T. Hopf, S. Hearne, C. Pakes, Steven Prawer, M. Mitic, E. Gauja, S. Andresen, Fay Hudson and 2 more. 2005

173 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4de37d12e2d59c40c2f6d8ad0c46f10577760f55

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1. S. Pezzagna
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Citations in the corpus

• Creation and nature of optical centres in diamond for single-photon emission—overview and critical remarks (2011, background): “For implantation in Si, it is also possible to detect the single-ion implantation events by measuring the pulses of the electrical current produced by the generation of electron–hole pairs [42].”
• Silicon quantum electronics (2012, unknown): “…on adapting the industry standard technique of ion implantation to implant single dopants into a silicon device in a controlled manner (Batra et al., 2007; Bielejec et al., 2010; Jamieson et al., 2005; Schenkel et al., 2003; Seamons et al., 2008; Shinada et al., 2008; Weis et al., 2008).”