Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth

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Nanowires With Promise for Photovoltaics (2011, background): “The NWs are grown at low temperatures (400–500 ◦ C) relative to thin films (600–700 ◦ C). The NW growth dynamics are complex and are influenced by the metal seed particle, the substrate material [43], growth temperature [44], [45], precursor supersaturation [46], [47], and NW pitch and diameter [ 48”
III–V nanowire photovoltaics: Review of design for high efficiency (2013, background): “Patterned growth can be achieved by standard lithography procedures, such as electron beam lithography (EBL) [18] or nanoimprint lithography (NIL) [19] to produce an Au dot array.”
Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, unknown): “Consider for example the manufacturability of vertical arrays of nanowire field-effect transistors which are commonly fabricated by patterning the metal catalyst to grow vertically aligned 〈1 1 1〉 nanowires on (1 1 1) substrates (see for example Mårtensson et al [49]).”