ZnO diode fabricated by excimer-laser doping

By T. Aoki, Y. Hatanaka, D. Look. 2000

703 citations recorded by the source corpus.

A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4d77f1069adfdc3dd5a5cb718bf50985d7e45d0c

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In Condensed Matter Physics

1. Jang-Won Kang
2. Seong-Ju Park
3. D. Hwang
4. Yong‐Seok Choi

In Electrical and Electronic Engineering

1. Seong-Ju Park
2. Jang-Won Kang
3. Agnieszka Kołodziejczak-Radzimska
4. T. Jesionowski
5. D. Hwang
6. Yong‐Seok Choi

In Materials Chemistry

1. Agnieszka Kołodziejczak-Radzimska
2. T. Jesionowski
3. Seong-Ju Park
4. D. Hwang
5. Jang-Won Kang
6. Yong‐Seok Choi

Citations in the corpus

• Review—Influence of Processing Parameters to Control Morphology and Optical Properties of Sol-Gel Synthesized ZnO Nanoparticles (2021, neutral): “devices, optoelectronic and electronic devices [5-8].”
• Recent Advances in ZnO-Based Light-Emitting Diodes (2010, methodology): “in Table V, together with the structure, growth method, and emission peak position [76], [132]–[156].”