Electron-beam-induced current study of grain boundaries in multicrystalline silicon

By Jun Chen, T. Sekiguchi, Deng-Yun Yang, F. Yin, K. Kido, S. Tsurekawa. 2004

231 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4d539ae84b81689b969ef026e3bf77adda8bac17

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In Electrical and Electronic Engineering

1. Matthew D. Pickett
2. Tonio Buonassisi

Citations in the corpus

• Chemical natures and distributions of metal impurities in multicrystalline silicon materials (2005, background): “The capacity of a given type of structural defect to absorb transition metals is a parameter that is known to vary in a somewhat predictable manner.(19,20,56,57) Since different mc-Si materials tend to have unique sets of structural defect types, one may expect variations in the amount of transition”