Fermi-level depinning for low-barrier Schottky source/drain transistors
By D. Connelly, C. Faulkner, P. Clifton, D. Grupp. 2006
155 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/4d115155dd4b6820b0467c761785010e102f3809
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “yet thin enough to ensure a high tunneling probability at the MoS2 band edges [226,232].”