Crystal structure, properties and nanostructuring of a new layered chalcogenide semiconductor, Bi2MnTe4
By D. S. Lee, Tae-Hoon Kim, Cheol-hee Park, C. Chung, Y. Lim, W. Seo, Hyung‐Ho Park. 2013
205 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/4cb37c4c7c582303b676c140b9ec6f6844653a6a
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Gapless Surface Dirac Cone in Antiferromagnetic Topological Insulator MnBi2Te4 (2019, background): “) [15, 16], exemplified by MnBi2Te4 [17–35], is established very recently to be stoichiometric TIs with an A-type AFM ground state.”
- Chemical Aspects of the Candidate Antiferromagnetic Topological Insulator MnBi2Te4 (2018, methodology): “In agreement with previously reported powder data,([25]) MnBi2Te4 crystallizes in the centrosymmetric space group R3̅m (no.”
- High-temperature quantum anomalous Hall regime in a MnBi2Te4/Bi2Te3 superlattice (2020, background): “structure of undoped Bi2Te3 [22] is modified from a disordered magnetic impurity system into a nearly-periodic alternating sequence of QLs (Bi2Te3) and septuple layers (SL) of atoms, each SL with the MnBi2Te4 crystal structure [23] (Fig.”