Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

By Seyoung Kim, J. Nah, I. Jo, D. Shahrjerdi, Luigi Pietro Maria Colombo, Z. Yao, E. Tutuc, Sanjay Kumar Banerjee. 2009

1,030 citations recorded by the source corpus.

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4c80c73cea39b4923307571cb6b52cc283ba7028

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Impact of Size Effect on Graphene Nanoribbon Transport (2010, background): “There have been a number of measurements of graphene mobility—most of them have been on wide ribbons [1], [11], [12].”