Thickness dependence of the properties of highly c-axis textured AlN thin films

By F. Martin, Paul Muralt, M. Dubois, A. Pezous. 2004

309 citations recorded by the source corpus.

The influence of film thickness on the material properties of aluminum nitride (AlN) thin films deposited on Pt(111) electrodes has been investigated experimentally by means of x-ray diffraction, dielectric response, atomic force microscopy, interferometry measurement of effective d(33), and residual stress measurement. The thickness was varied between 35 nm and 2 mum. Full width at mid-height of the rocking curve decreased from 2.60 to 1.14degrees, rms roughness increased from 3.8 to 18.6 Angstrom, the effective d(33), namely d(33f), from 2.75 to 5.15 pm/V. The permittivity epsilon(AIN) was stable at 10.2, whereas the dielectric losses decreased from 1% to 0.1%. The breakdown electric field under do voltages varied between 4.0 and 5.5 MV/cm. (C) 2004 American Vacuum Society.

Subfields: Biomedical Engineering, Condensed Matter Physics, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/4c365bbb57112c8ee6a593c59252f1b85cd4ed69

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In Biomedical Engineering

Citations in the corpus

MEMS Vibration Energy Harvesting Devices With Passive Resonance Frequency Adaptation Capability (2009, methodology): “Properties of aluminum nitride reported by Lanz et al. [24] and Martin et al. [ 25 ] have been used for simulation.”
A Review on Piezoelectric Energy Harvesting: Materials, Methods, and Circuits (2017, methodology): “For AlN, the values were taken to be ε33/εo = 10, d31=–2.6 × 10−12m/V and tanδ=0.1% (dielectric properties measured at 10 kHz for film with thickness of 2 µm by Martin et al. (2004) and piezoelectric property was reported by Tsubouchi and Mikoshiba for 1 µm thick film (Tsubouchi and Mikoshiba 1985).”