MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors

By Liu Wang, Jiansheng Jie, Zhibin Shao, Qing Zhang, Xiaohong Zhang, Yuming Wang, Zheng Sun, Shui-Tong Lee. 2015

601 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4bd12dd5ff98e5bf36ce1025974a8f29de67c27f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Wenli Xu
2. Xiaoqiang Li
3. Zhiqian Wu
4. Sen Xu
5. Yanghua Lu
6. Zhijuan Xu
7. Shengjiao Zhang
8. Shisheng Lin

In Materials Chemistry

1. Wenli Xu
2. Xiaoqiang Li
3. Zhiqian Wu
4. Sen Xu
5. Yanghua Lu
6. Zhijuan Xu
7. Shengjiao Zhang
8. Shisheng Lin

Citations in the corpus

• Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity (2015, background): “vice, while detectivity stands for the ability for sensing weak signal of the photodetector. Responsivity can be determined with equation (1) shown below. As shot noise is usually the main dark noise,[41, 42] detectivity can be determined with equations (2) shown below. LD laser II Responsivity P (”