The current understanding on the diamond machining of silicon carbide

By Saurav Goel. 2014

182 citations recorded by the source corpus.

The Glenn Research Centre of NASA, USA (www.grc.nasa.gov/WWW/SiC/, silicon carbide electronics) is in pursuit of realizing bulk manufacturing of silicon carbide (SiC), specifically by mechanical means. Single point diamond turning (SPDT) technology which employs diamond (the hardest naturally-occurring material realized to date) as a cutting tool to cut a workpiece is a highly productive manufacturing process. However, machining SiC using SPDT is a complex process and, while several experimental and analytical studies presented to date aid in the understanding of several critical processes of machining SiC, the current knowledge on the ductile behaviour of SiC is still sparse. This is due to a number of simultaneously occurring physical phenomena that may take place on multiple length and time scales. For example, nucleation of dislocation can take place at small inclusions that are of a few atoms in size and once nucleated, the interaction of these nucleations can manifest stresses on the micrometre length scales. The understanding of how these stresses manifest during fracture in the brittle range, or dislocations/phase transformations in the ductile range, is crucial to understanding the brittle–ductile transition in SiC. Furthermore, there is a need to incorporate an appropriate simulation-based approach in the manufacturing research on SiC, owing primarily to the number of uncertainties in the current experimental research that includes wear of the cutting tool, poor controllability of the nano-regime machining scale (effective thickness of cut), and coolant effects (interfacial phenomena between the tool, workpiece/chip and coolant), etc. In this review, these two problems are combined together to posit an improved understanding on the current theoretical knowledge on the SPDT of SiC obtained from molecular dynamics simulation.

Subfields: Biomedical Engineering, Materials Chemistry, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/4b896fb7de7dc2c1fe4ca7745d3996aa15fc2e76

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In Biomedical Engineering

1. Zige Tian
2. Xun Chen
3. Xipeng Xu

In Materials Chemistry

1. Zige Tian
2. Xun Chen
3. Xipeng Xu

In Mechanics of Materials

1. Zige Tian
2. Xun Chen
3. Xipeng Xu

Citations in the corpus

• Molecular dynamics simulation of the material removal in the scratching of 4H-SiC and 6H-SiC substrates (2020, background): “Single crystal silicon carbide (SiC) has extensive applications in microelectronics, optoelectronics, aerospace, and medical sectors because of its specific properties, such as chemical inertness, high thermal conductivity, high specific stiffness, and high-temperature stability [1].”
• Damage evolution mechanism and low-damage grinding technology of silicon carbide ceramics (2024, unknown): “Current reviews predominantly concentrate on diamond turning processes involving monocrystalline SiC [44, 45].”
• Diamond machining of silicon: A review of advances in molecular dynamics simulation (2015, unknown): “39 that cannot inherently be captured by all the potential energy functions [131-132].”