Flat-Band Potential of a Semiconductor: Using the Mott Schottky Equation.

By K. Gelderman, L. Lee, S. Donne. 2007

1,213 citations recorded by the source corpus.

Subfields: Electrochemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/4b5dbe5803097df8757826761559e1fe68cbedb7

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Junqiu Guo
2. Xin Liao
3. Ming-Hsien Lee
4. G. Hyett
5. Chung-Che Huang
6. D. Hewak
7. S. Mailis
8. Wei Zhou

Citations in the corpus

• High-efficiency two-dimensional Ruddlesden–Popper perovskite solar cells (2016, neutral): “V measurements on the 2D devices and measured the charge density profile of the perovskite depletion region in the reverse bias regime from − 1.0 V to 0 V (low dark current without charge injection) using the Mott–Schottky equation 33 .”