Carrier-selective contacts for Si solar cells

By F. Feldmann, M. Simon, M. Bivour, C. Reichel, M. Hermle, Stefan W. Glunz. 2014

200 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4ac2af45250a25f00c42b2e09aca13556849f289

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Robby Peibst
2. R. Brendel
3. F. Feldmann
4. M. Hermle
5. W. Kessels
6. L. Black

In Electrical and Electronic Engineering

1. R. Brendel
2. Robby Peibst
3. F. Feldmann
4. W. Kessels
5. M. Hermle
6. B. Macco
7. Jimmy Melskens
8. Riku Jäntti

Citations in the corpus

• Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells (2015, background): “of 725 mV is, to our knowledge, the highest value reported so far for p+ -doped poly-Si junctions (compare [13] and [20]).”
• Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water (2015, background): “The partial crystallization of the Si film is also beneficial in terms of mitigating parasitic absorption when the TOPCon structure is placed on the front side [16].”
• A Review on Printed Electronics: Fabrication Methods, Inks, Substrates, Applications and Environmental Impacts (2021, background): “With a global market share of about 90%, the silicon solar cells have power conversion efficiencies (PCEs) varying between 19 and 25% [99–101].”
• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “[51], [52] or POLO (poly-Si on oxide) [53].”