Aligned growth of isolated single-walled carbon nanotubes programmed by atomic arrangement of substrate surface

By H. Ago, Kazuhiro Nakamura, K. Ikeda, Naoyasu Uehara, N. Ishigami, M. Tsuji. 2005

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Gas analysis of the CVD process for high yield growth of carbon nanotubes over metal-supported catalysts (2006, background): “Furthermore, it can be performed at relatively low temperatures (600–1000 C), thus enabling the patterned growth of nanotubes on substrates [10,11].”