A quasi-steady-state open-circuit voltage method for solar cell characterization

By R. Sinton, A. Cuevas. 2000

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>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared (2013, background): “curves” from the solar cell precursor lifetime data, similar to suns–Voc measurements [19].”
Solution‐processed Cu(In,Ga)(S,Se)2 absorber yielding a 15.2% efficient solar cell (2013, methodology): “RSL, GSL, A, and J0 are the series resistance and shunt conductance in light, ideality factor, and reverse saturation current determined by [27] method and by the JSC–VOC method [35,36] (in parentheses).”
Device characteristics of a 10.1% hydrazine‐processed Cu2ZnSn(Se,S)4 solar cell (2012, methodology): “RSL, GSL, A, and J0 are the series resistance in light, shunt conductance in light, ideality factor, and reverse saturation current determined by the Sites method [11] (and Jsc–Voc method in parentheses [12,13]).”