Localized edge states in two-dimensional topological insulators: Ultrathin Bi films

By M. Wada, Shuichi Murakami, F. Freimuth, G. Bihlmayer. 2010

258 citations recorded by the source corpus.

We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4a3fffde0060d9bcf62b814f24e76697c704f8fe

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In Atomic and Molecular Physics, and Optics

1. Tanmoy Das
2. Hsin Lin
3. Arun Bansil

In Materials Chemistry

1. Tanmoy Das
2. Hsin Lin
3. Arun Bansil

Citations in the corpus

• Colloquium : Topological band theory (2016, background): “For example, Bi thin films are predicted to be 2D TIs, but Sb thin films are trivial and become nontrivial under applied strain.(Wada et al. 2011; Chuang et al. 2013) Some of these thin films have been synthesized in various experiments but there still is no transport evidence for their being QSH in”