Insulator-to-metal transition in ZnO by electric double layer gating

By H. Shimotani, H. Asanuma, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Y. Iwasa. 2007

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The authors report high-density carrier accumulation and a gate-induced insulator-to-metal transition in ZnO single-crystalline thin-film field effect transistors by adopting electric double layers as gate dielectrics. Hall effect measurements showed that a sheet carrier density of 4.2×1013cm−2 was achieved. The highest sheet conductance at room temperature was ∼1mS, which was sufficient to maintain the metallic state down to 10K. These results strongly suggest the versatility of electric double layer gating for various materials.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/49601dde62a65f0fabc39aa25c8794b22735d82b