All‐Organic Permanent Memory Transistor Using an Amorphous, Spin‐Cast Ferroelectric‐like Gate Insulator
By R. Schroeder, L. Majewski, M. Grell. 2004
197 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/49027a314e68b395a844cfc5fe51016abf3ce93d
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In Biomedical Engineering
In Electrical and Electronic Engineering
In Polymers and Plastics
Citations in the corpus
- Ferroelectric polymer Langmuir-Blodgett films for nonvolatile memory applications (2005, background): “based on an amorphous polymer gate insulator [32].”