Study of loss in superconducting coplanar waveguide resonators
By J. Sage, V. Bolkhovsky, William D. Oliver, B. Turek, Paul Welander. 2010
221 citations recorded by the source corpus.
Superconducting coplanar waveguide (SCPW) resonators have a wide range of applications due to the combination of their planar geometry and high quality factors relative to normal metals. However, their performance is sensitive to both the details of their geometry and the materials and processes that are used in their fabrication. In this paper, we study the dependence of SCPW resonator performance on materials and geometry as a function of temperature and excitation power. We measure quality factors greater than $2\times10^6$ at high excitation power and $6\times10^5$ at a power comparable to that generated by a single microwave photon circulating in the resonator. We examine the limits to the high excitation power performance of the resonators and find it to be consistent with a model of radiation loss. We further observe that while in all cases the quality factors are degraded as the temperature and power are reduced due to dielectric loss, the size of this effect is dependent on resonator materials and geometry. Finally, we demonstrate that the dielectric loss can be controlled in principle using a separate excitation near the resonance frequencies of the resonator.
Subfields: Astronomy and Astrophysics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/48fec557a5c91ecd9d4d11ba7082f8d61e10dffc
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In Atomic and Molecular Physics, and Optics
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- Alexandre Blais
- Andreas Wallraff
- A. Grimsmo
- Franco Nori
- Robert J. Schoelkopf
- Göran Wendin
- Michel H. Devoret
In Electrical and Electronic Engineering
Citations in the corpus
- Circuit quantum electrodynamics (2020, background): “…of internal losses in superconducting resonators at low power are believed to be two-level systems (TLSs) that reside in the bulk dielectric, in the metal substrate, and in the metal-vacuum and substrate-vacuum interfaces where the electric field is large (Sage et al., 2011; Wang et al., 2015).”