Optical Properties of Semiconductors
By Joseph H. Simmons, K. S. Potter. 2000
367 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/48e414536befa7073f5b781ac43c86fd77a25ea4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon (2003, background): “5 eV, corresponding to a wavelength of approximately 500 nm, light absorption is highly efficient and the absorption coefficient is determined by available conduction band states [19], [20].”
- Reversible Thermal Tuning of All‐Dielectric Metasurfaces (2017, methodology): “where constant can be chosen to be equal to 95 eV for silicon[55] and plotted as shown in Figure 2a.”
- Electron-phonon interactions from first principles (2016, background): “The first measurements of such effects were performed by Becker and Fan [182], and stimulated the development of the first theory of temperature-dependent band gaps [169].”