Structural properties of the multilayer graphene/4H-SiC(0001) system as determined by surface x-ray diffraction

By J. Hass, R. Feng, J. Millán-Otoya, X. Li, M. Sprinkle, P. First, C. Berger, W. D. Heer, E. Conrad. 2007

139 citations recorded by the source corpus.

We present a structural analysis of the multilayer graphene/$4H\mathrm{Si}\mathrm{C}(000\overline{1})$ system using surface x-ray reflectivity. We show that graphene films grown on the C-terminated $(000\overline{1})$ surface have a graphene-substrate bond length that is very short $(1.62\phantom{\rule{0.3em}{0ex}}\mathrm{\AA{}})$. The measured distance rules out a weak van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab initio calculations. The measurements also indicate that multilayer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/483d687d6c6a1946f8d15514a45b29675e735327

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

The electronic properties of graphene (2007, background): “This kind of disorderhas been observed experimentally by di erent te hniques(Bar et al., 2007; Hass et al., 2007b).”
Raman spectroscopy and imaging of graphene (2008, methodology): “X-ray diffraction (XRD) [54, 75 ] and scanning tunneling microscopy”