Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature

By S. Basu, Bong Jae Lee, Zhuomin M. Zhang. 2010

158 citations recorded by the source corpus.

Subfields: Civil and Structural Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/482c70c8140ee2a49d264776e7e5f2d2be9d1b45

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Civil and Structural Engineering

1. Boqin Zhao
2. Xianglei Liu
3. Zhuomin M. Zhang

In Electrical and Electronic Engineering

1. Boqin Zhao
2. Zhuomin M. Zhang

In Materials Chemistry

1. Boqin Zhao
2. Xianglei Liu
3. Richard Z. Zhang
4. Zhuomin M. Zhang

Citations in the corpus

• Study of magnetic polaritons in deep gratings for thermal emission control (2014, background): “The dielectric function for p-type doped Si is taken from [36], assuming the temperature is at 300 K with a doping concentration 10(21) cm (3).”
• Near-field radiative heat transfer with doped-silicon nanostructured metamaterials (2014, background): “The Drude model of D-Si may be written as eðxÞ 1⁄4 e1 x(2)p=ðx(2) þ icxÞ, where e1 is a high-frequency constant, xp is the plasma frequency, and c is the scattering rate [51].”