Determination of carrier density of ZnO nanowires by electrochemical techniques

By I. Mora‐Seró, F. Fabregat‐Santiago, Benjamin Denier, Juan Bisquert, R. Tena-Zaera, J. Elias, C. Lévy‐Clément. 2006

282 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/48120f1e36fbdcc1b290b8ac118a362b3b48684b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Zhong Lin Wang
2. Sheng Xu
3. L. Peter
4. Wenzhuo Wu
5. Chengkuo Lee
6. Long Liu
7. Caofeng Pan
8. Xinge Guo

In Materials Chemistry

1. Sheng Xu
2. Zhong Lin Wang
3. L. Peter
4. Prashant Kamat
5. M. Tyona
6. Yoshio Bando
7. Dmitri Golberg
8. Younan Xia

Citations in the corpus

• One-dimensional ZnO nanostructures: Solution growth and functional properties (2011, background): “The free carrier concentration in the nanowire is highly dependent on the synthesis and post-annealing conditions [126, 530], and may vary from one nanowire to another even from the same synthesis batch [528].”
• The Grätzel Cell: Where Next? (2011, background): “An interesting exception to this conclusion may be the case of ZnO nanorods 38,39 , where it is possible that charge separation is enhanced by the presence of a space charge region in the highly doped oxide.”