In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

By S. Figge, T. Böttcher, S. Einfeldt, D. Hommel. 2000

133 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/47841474bf76bc4e34f5a29a750bd76b813030a0