Magnetic tunnel junctions
By J. Zhu, Chando Park. 2006
442 citations recorded by the source corpus.
Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlO x - and TiO x -based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature. As their commercialization in various applications begins, a new type of magnetic tunnel junction with a crystalline MgO tunnel barrier has emerged that shows a much larger room-temperature magnetoresistive effect. We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: read sensors in hard disk drives and memory elements in magnetoresistive random access memory. An emphasis is placed on the material aspects of magnetic tunnel junctions.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/46d33a33ede2b4a8ad61e3008fc5cf14c10dd2d0
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In Atomic and Molecular Physics, and Optics
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In Condensed Matter Physics
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In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Spintronics (2015, methodology): “In September 2004, Seagate Technology shipped the first HDD product (Momentus II) with read heads made of TiOx-based MTJs, and later in 2007 the HDD read heads with MgO-based MTJs came out with a much higher TMR ratio [Zhu and Park 2006; Mao et al. 2006].”