Optical critical points of thin-film Ge 1-y Sn y alloys: A comparative Ge 1-y Sn y /Ge 1-x Si x study
By V. D’Costa, C. Cook, A. G. Birdwell, C. Littler, M. Canonico, S. Zollner, J. Kouvetakis, J. Menéndez. 2006
295 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/46b358b0d01c6bcb567752c651dbb7b4a7161d86
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Citations in the corpus
- Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers (2010, background): “For the GezSn1−z and Ge-like SixGeySn1−x−y material systems, the unstrained bandgaps can be described by the suggested quadratic polynomials [24]–[26]”