Extreme Ultraviolet Lithography

By M. Besacier, C. Constancias, J. Robic. 2013

167 citations recorded by the source corpus.

View Paper: https://www.semanticscholar.org/paper/44f8b9ab822e241f2cd93f7e253826e094e9e38c

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1. Hossein Moghimifam
2. S. K. Kamarapu
3. Brady Goenner
4. Bruce K. Gale
5. Christopher J. Lambert
6. Alexander R Jafek
7. U. Nze

Citations in the corpus

• A Review of Current Methods in Microfluidic Device Fabrication and Future Commercialization Prospects (2018, background): “This light is then shone onto a special photosensitive resist, after which typical developing and etching protocols can be followed [81].”
• High-NA EUV lithography: current status and outlook for the future (2022, unknown): “High-NA lenses are targeted to have fi gure accuracy 20 pm rms. 5) Mid-and high-spatial frequency roughness is currently below 100 pm rms on 0.33 NA lenses, 6) and similar levels will be needed on high-NA lenses to keep fl are (scattered light) to acceptable levels.”