Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors

By Sang-Mo Koo, M. D. Edelstein, Qiliang Li, C. Richter, E. Vogel. 2005

142 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/44a1347647829f638e550d64d738e519bcc44c4a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Eric Pop
2. János Vörös

In Biomedical Engineering

1. Robert MacKenzie
2. Eric Pop
3. János Vörös
4. D. Grieshaber
5. Erik Reimhult

In Electrical and Electronic Engineering

1. Eric Pop
2. Sanjiv Sinha
3. Kenneth E. Goodson

Citations in the corpus

• Heat Generation and Transport in Nanometer-Scale Transistors (2006, methodology): “Transistors made from semiconductor nanowires (NWs) have recently received a lot of attention for their currentcarrying capabilities, low synthesis temperature (as low as 275 � C for CVD-grown germanium NWs [51]), and relative ease of fabrication and integration with currently existing technologies ”
• Electrochemical Biosensors - Sensor Principles and Architectures (2008, background): “Many potentiometric devices are also based on various forms of field-effect transistor (FET) devices to measure pH changes, selective ion concentrations and the kinetics of biocatalytic reactions involving enzymes [31].”