Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures

By J. Serrano, Á. Rubio, E. Hernández, Alfonso Muñoz, A. Mujica. 2000

187 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/4452bea2595cb60e7ef76f1ef550bf43c33e1196

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Kai Nordlund
2. K. Albe
3. Paul Erhart
4. J. Nord

In Electrical and Electronic Engineering

1. Paul Erhart
2. Á. Rubio
3. Alfonso Muñoz
4. R. Needs
5. A. Mujica
6. Kai Nordlund
7. K. Albe
8. J. Nord

In Mechanics of Materials

1. Kai Nordlund
2. K. Albe
3. Paul Erhart
4. J. Nord

Citations in the corpus

• Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride (2003, methodology): “In the present context we used results of density functional theory calculations on the structure and energy of different solid GaN phases of Serrano et al. (Serrano et al. 2000) as well as data of Muñoz and Kunc (Muñoz & Kune 1991).”
• High-pressure phases of group-IV, III–V, and II–VI compounds (2003, background): “Firstprinciples calculations indicate that the high-pressure NaCl phases are semiconducting with an indirect energy gap (Serrano et al., 2000).”