Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces
By J. Michl, T. Teraji, S. Zaiser, I. Jakobi, G. Waldherr, F. Dolde, P. Neumann, Marcus W. Doherty, N. Manson, J. Isoya and 1 more. 2014
184 citations recorded by the source corpus.
Synthetic diamond production is a key to the development of quantum metrology and quantum information applications of diamond. The major quantum sensor and qubit candidate in diamond is the nitrogen-vacancy (NV) color center. This lattice defect comes in four different crystallographic orientations leading to an intrinsic inhomogeneity among NV centers, which is undesirable in some applications. Here, we report a microwave plasma-assisted chemical vapor deposition diamond growth technique on (111)-oriented substrates, which yields perfect alignment (94% ± 2%) of as-grown NV centers along a single crystallographic direction. In addition, clear evidence is found that the majority (74% ± 4%) of the aligned NV centers were formed by the nitrogen being first included in the (111) growth surface and then followed by the formation of a neighboring vacancy on top. The achieved homogeneity of the grown NV centers will tremendously benefit quantum information and metrology applications.
Subfields: Materials Chemistry, Mechanics of Materials
View Paper: https://www.semanticscholar.org/paper/442cf8ad23196d7daa9e862ae5a403b794469878
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Materials Chemistry
Citations in the corpus
- Magnetometry with nitrogen-vacancy defects in diamond (2013, background): “This effect can be mitigated by using low densities of NV defects in high-purity diamond samples and by achieving preferential orientation of the NV defects directly during the diamond growth [83, 84, 85].”