Amorphous Gallium Oxide‐Based Gate‐Tunable High‐Performance Thin Film Phototransistor for Solar‐Blind Imaging
By Yuan Qin, Shibing Long, Qiming He, Hang Dong, Guangzhong Jian, Ying Zhang, Xiaohu Hou, Pengju Tan, Zhongfang Zhang, Ying-Jie Lu and 6 more. Advanced Electronic Materials, 2019
136 citations recorded by the source corpus.
Ga2O3‐based solar‐blind photodetectors (PDs) are now attracting more and more attention for their potential application in optical imaging, spatial communication, etc. However, the performance of ever‐reported Ga2O3‐based PDs is still not good enough, strongly affected by either the Ga2O3 crystalline quality or the device structure, which severely limits their capability to detect extremely weak signals and achieve future applications. In this work, solar‐blind field‐effect phototransistor based on radio‐frequency‐magnetron sputtered amorphous gallium oxide thin film with ultrahigh photodetection performance are demonstrated. The key feature of the device is gate‐tunable photodetection enabling ultrahigh responsivity of 4.1 × 103 A W−1, external quantum efficiency of 2 × 106%, and detectivity of 2.5 × 1013 Jones under a 70 µW cm−2 weak signal of 254 nm light due to a high internal gain and field effect control of the phototransistor. Furthermore, high‐resolution imaging is achieved for the imaging target by integrating the as‐fabricated photodetectors into the imaging system, which is the first report on solar‐blind imaging of amorphous gallium oxide photodetectors. Such field‐effect phototransistors with ultrahigh performance and excellent imaging capability address a significant step toward the feasibility and practicability of gallium oxide photodetectors in solar‐blind imaging system.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/43e6796f26e80dc5a523c34de60c3e858dbc70bf
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In Electrical and Electronic Engineering
Citations in the corpus
- Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications (2020, methodology): “Based on a similar imaging method, Qin et al achieved solar-blind imaging verification for an a-GaOx thin-filmbased three-terminal field-effect phototransistor (figure 18(d)) [222].”