Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films
By H. Béa, Manuel Bibes, S. Cherifi, Frithjof Nolting, Bénédicte Warot-Fonrose, Stephane Fusil, Gervasi Herranz, C. Deranlot, Eric Jacquet, K. Bouzehouane and 1 more. 2006
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The authors report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers in magnetic tunnel junctions with La2∕3Sr1∕3MnO3 and Co electrodes. In such structures, a positive tunnel magnetoresistance up to 30% is obtained at low temperature. A second example is the exploitation of the antiferromagnetic spin structure of a BiFeO3 film to induce a sizable (∼60Oe) exchange bias on a ferromagnetic film of CoFeB at room temperature. Remarkably, the exchange bias effect is robust upon magnetic field cycling, with no indications of training.
Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/43d16f0fbca980c732d3485c123067a6d9de5e08
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In Atomic and Molecular Physics, and Optics
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Oxide Spintronics (2007, background): “at room temperature in BiFeO3/CoFeB bilayers [286], [287].”