Phonon renormalization in doped bilayer graphene

By A. Das, B. Chakraborty, S. Piscanec, Simone Pisana, A. Sood, Andrea C. Ferrari. 2008

241 citations recorded by the source corpus.

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/43cb6139b6c422fc8f8b7108db88fe117c86dfc0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. O. Frank
2. S. Reich
3. R. Gorbachev
4. Costas Galiotis
5. M. Kalbáč
6. K. Novoselov

In Materials Chemistry

1. O. Frank
2. F. Schedin
3. S. Reich
4. R. Gorbachev
5. Costas Galiotis
6. K. Papagelis
7. J. Parthenios
8. M. Kalbáč

Citations in the corpus

• Evaluating arbitrary strain configurations and doping in graphene with Raman spectroscopy (2017, methodology): “The local n-type doping was calculated from the expected G frequency shifts [28].”