Influence of the Ga-content on the bulk defect densities of Cu(In,Ga)Se2

By G. Hanna, A. Jasenek, U. Rau, H. Schock. 2001

189 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/4314e2e73fc5427a9bde63cfc87ecbad9a69190a

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Citations in the corpus

• Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells (2004, background): “The anticipated changes in the physical properties of the CIS films with the addition of Ga include an increase in band-gap, which mainly shifts the position of the conduction-band minimum [5], as well as changes in the hole concentration [6], bulk defect densities [7], absorption coefficients, and ”