Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films

By J. Collet, O. Tharaud, A. Chapoton, D. Vuillaume. 2000

248 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4127981029af06fc2b46cebb0b68ac0da4f6a5cf

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Hagen Klauk
2. G. Horowitz
3. Ute Zschieschang
4. Marcus Halik
5. Antonio F. Facchetti
6. Zhenan Bao
7. Takao Someya

Citations in the corpus

• Low-voltage organic transistors with an amorphous molecular gate dielectric (2004, methodology): “The use of SAM gate dielectrics for organic TFTs was pioneered by the Vuillaume grou”
• Organic thin film transistors: From theory to real devices (2004, methodology): “More recently, Collet and coworkers used electronbeam lithography associated with lift-off technique to define a channel length of only 30 nm.(120) The channel was fabricated directly on top of the semiconductor layer (sexithiophene).”