Epitaxial graphene on 6H-SiC and Li intercalation

By C. Virojanadara, S. Watcharinyanon, A. Zakharov, L. Johansson. 2010

184 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/40c3624c003df2c30183f4999510846697e2d27f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Francesco Bonaccorso
2. Andrea C. Ferrari
3. C. Backes
4. Xiaodong Zhuang
5. A. Ciesielski
6. Paolo Samorì
7. A. Castellanos-Gómez
8. Xinliang Feng

In Materials Chemistry

1. Kostas Kostarelos
2. M. Prato
3. Francesco Bonaccorso
4. A. Bianco
5. A. Castellanos-Gómez
6. Jonathan N. Coleman
7. Andrea C. Ferrari
8. Paolo Samorì

Citations in the corpus

• Epitaxial Graphene on SiC: A Review of Growth and Characterization (2016, background): “However, hydrogen, sodium [96,112,113], oxygen [114], lithium [115], Si [116], gold [117], fluorine [118], and”
• Production and processing of graphene and related materials (2020, background): “Contrary to Si, that intercalates only at T > 800 °C through migration at graphene domain boundaries and other defects, Li [698, 699] was found to penetrate into the C layer already at RT through the formation of Li-compounds.”