The Role of Sulfur in Solution‐Processed Cu2ZnSn(S,Se)4 and its Effect on Defect Properties

By Hsin‐Sheng Duan, Wenbing Yang, B. Bob, Chia-Jung Hsu, B. Lei, Yang Yang. 2013

237 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3fddd45fda7784d449ed0bf7bfe84bc84b15aaa1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Jiang Tang
2. G. Wang
3. Chao Chen
4. Matthew C. Beard
5. Shiyou Chen

In Electrical and Electronic Engineering

1. Jiang Tang
2. D. Xue
3. Chao Chen
4. G. Wang
5. Matthew C. Beard
6. Xun Xiao
7. Shiyou Chen
8. H. Hillhouse

In Materials Chemistry

1. Jiang Tang
2. D. Xue
3. Chao Chen
4. Matthew C. Beard
5. Xun Xiao
6. Shiyou Chen
7. H. Hillhouse

Citations in the corpus

• Highly efficient and stable planar heterojunction solar cell based on sputtered and post-selenized Sb2Se3 thin film (2019, background): “Since defects with higher activation energy are more likely to behave as recombination centers [33], the 380-Sb2Se3 device is expected to suffer from larger recombination center population and thus more severe decline of device performance.”
• Enhanced Sb2Se3 solar cell performance through theory‐guided defect control (2017, background): “profiling characterization methods because drive-level capacitance profiling is sensitive only to the bulk defects, while capacity–voltage is sensitive to the bulk traps plus interfacial traps.[3,27,28] The calculated interfacial trap states in I-Sb2Se3 and W-Sb2Se3 devices were approximately 10(15)”