Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

By J. Hsu, Michael Manfra, D. Lang, S. Richter, S. Chu, A. Sergent, R. Kleiman, Loren N. Pfeiffer, R. Molnar. 2001

285 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/3f849c9849e0aad07c1c6212915eddb6931e7807

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1. P. Sandvik
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Citations in the corpus

• Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes (2002, background): “This type of dislocation has been reported to be optically and electrically active in GaN and related alloys [12], [13].”