High-performance ZnO nanowire field effect transistors

By Pai-chun Chang, Zhiyong Fan, C. Chien, D. Stichtenoth, C. Ronning, J. Lu. 2006

244 citations recorded by the source corpus.

ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3f280c2b6dcd39a751bb2dac2ee864599b0751ed