Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition

By George T. Wang, A. Talin, D. Werder, J. R. Creighton, E. Lai, R. Anderson, I. Arslan. 2006

176 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3eec23907ebd91bffaeb5382430cc7f65cdfd12e

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In Biomedical Engineering

1. Xiuling Li
2. S. Fortuna

In Materials Chemistry

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Citations in the corpus

• Metal-catalyzed semiconductor nanowires: a review on the control of growth directions (2010, methodology): “Wang and colleagues used MOCVD to grow vertically aligned GaN nanowires in the nonpolar [11–20] direction on r-plane sapphire using the Ni catalyst [75, 91].”