Epitaxial growth of single-domain graphene on hexagonal boron nitride.

By Wei Yang, Guorui Chen, Zhiwen Shi, Cheng-Cheng Liu, Lianchang Zhang, Guibai Xie, Meng Cheng, Duoming Wang, Rong Yang, D. Shi and 5 more. Nature Materials, 2013

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2D materials and van der Waals heterostructures (2016, methodology): “used plasma to break down precursor methane molecules (48), after which growth occurred at 500°C over the course of 2 to 3 hours on hBN crystals mechanically exfoliated on a SiO2/Si substrate.”
Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation (2015, background): “and h-BN, including both in-plane h-BN-graphene hybrids and stacked graphene/h-BN (G/h-BN) structures, have been demonstrated very intriguing physical properties such as Hofstadter’s butterfly [4-10].”
A review on mechanics and mechanical properties of 2D materials—Graphene and beyond (2016, background): “For example, vdW interactions during epitaxial growth of graphene on h-BN defined the preferential growth directions [355].”