Highly ordered graphene for two dimensional electronics

By J. Hass, R. Feng, Tianbo Li, X. Li, Z. Zong, W. D. Heer, P. First, E. Conrad, C. Jeffrey, C. Berger. 2006

321 citations recorded by the source corpus.

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) (Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this letter the authors show that graphene grown from the SiC(0001¯) (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C face can have structural domain sizes more than three times larger than those grown on the Si face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3dd8d13945333564582dfbeedc60111f44c01a58

How researchers see this paper

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In Biomedical Engineering

1. Chuan Xu
2. Hong Li
3. Kaustav Banerjee
4. Navin Srivastava
5. Zhenhua Ni
6. T. Yu
7. Soumen Das
8. S. Seal

In Electrical and Electronic Engineering

1. Hong Li
2. Chuan Xu
3. Kaustav Banerjee
4. Navin Srivastava
5. V. Singh
6. T. Yu
7. L. Zhai
8. Zhenhua Ni

In Materials Chemistry

1. Hong Li
2. Kaustav Banerjee
3. Chuan Xu
4. Zhenhua Ni
5. T. Yu
6. Navin Srivastava
7. Zexiang Shen
8. Yingying Wang

Citations in the corpus

• Production, properties and potential of graphene (2010, background): “[71] Hass J, Feng R, Li T, Li X, Zong Z, Heer WAd, et al.”
• Graphene based materials: Past, present and future (2011, background): “Another uncertainty involves the different epitaxial growth patterns on different SiC polar face (i.e. Si-face or C-face).”
• Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects (2009, background): “It should be noted that there is a report that the adjacent layers do not interact with each other in multilayer GNRs grown on C-faced 4H-SiC (0001̄) [32], [49].”