Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

By K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, T. Maeda. 2000

369 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/3daeed7460f6037ca480cc2510a61215f97b14ef

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. T. Lu
2. H. Kuo
3. Shing-chung Wang
4. M. Hsieh
5. B. J. Lee
6. J. M. Hwang
7. T. Hsu
8. Ya-Ju Lee

Citations in the corpus

• Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates (2006, background): “By epitaxial lateral overgrowth (ELOG) with SiN or SiO mask patterned on as-grown GaN seed crystal, threading dislocations can be significantly eliminated [3]‐[ 5 ].”
• A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode (2008, neutral): “5 µ m were selectively grown at 900 °C by facet-controlled epitax”